2001. 7. 10 1/2 semiconductor technical data KDR511T schottky barrier type diode revision no : 0 high frequency rectification. switching regulators, converters, choppers. features low forward voltage : v f max=0.4v. low leakage current : i r max=500 a. maximum rating (ta=25 1 ) dim millimeters a b d e tsm 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.95 0.16 0.05 0.00-0.10 0.25+0.25/-0.15 c f g h i j k0.60 l0.55 a f g g d k b e c l h j j i 2 1 3 + _ + _ + _ + _ + _ 1. nc 2. anode 3. cathode 2 1 3 electrical characteristics (ta=25 1 ) type name marking lot no. t 1 characteristic symbol rating unit repetitive peak reverse voltage v rrm 15 v reverse voltage v r 15 v average forward current i o 1 a non-repetitive peak surge current i fsm 10 a junction temperature t j 125 1 storage temperature range t stg -55 125 1 characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =1ma 15 - - v forward voltage v f i f =0.5a - 0.30 0.35 v i f =1a - 0.35 0.40 v reverse current i r v r =10v - - 500 a total capacitance c t v r =10v, f=1mhz - 42 - pf reverse recovery time t rr i f =i r =100ma - - 15 ns
2001. 7. 10 2/2 KDR511T revision no : 0 reverse current i (ma) r 0.01 0 reverse voltage v (v) r i - v rr 51015 0.1 1 10 100 forward voltage v (v) forward current i (a) 0.1 0 3 1 0.1 0.01 f 0.5 0.4 0.3 0.2 f ta= 125 c i - v f f ta=125 c c - v r r reverse voltage v (v) interterminal capacitance c (pf) ta= 100 c ta=75 c ta=50 c ta=25 c ta=100 c ta=75 c ta=50 c ta = 25 c 10 2 10 3 10 f=1mhz 1 3 10 30 5
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